Physical Specifications:

• Detector Type: PIN, AC-coupled, single-sided, double metal

• Substrate: N-type, > 6kOhm/cm bulk resistivity

• Number of Readout Pads: 252

• Number of Guard Rings: 2

• Diced Detector Outline Dimensions:
  • Width, outer edge: 64mm (± 50µm)
  • Width, inner edge: 26mm (± 50µm)
  • Height: 70mm (± 50µm)

• Detector Thickness: 300µm (± 15µm)

• Pad Dimensions:
  • minimum pad area: 2x2mm nominal
  • maximum pad area: 4.5x4.5mm nominal

• Bond Pads: two at one end, 80 x 200µm each

• Bias Resistor Type: polysilicon

• Metalization Thickness: 0.8µm ± 0.1

• Passivation Layer: silicon dioxide, 0.5µm nominal thickness

Electrical Specifications:

Note: For long term stability and burn-in, all following specifications are to be met after a 72 hour biased burn-in period at room temperature and at below 50% humidity. All measurements are then performed at 21 (±3) deg. C.

• Max. Number of Bad Channels/Detector: 3

• Depletion Voltage (V_dep): <35V

• Interpad Resistance: >100MOhm at V_dep and delta V = 100mV

• Coupling Capacitance: >300pF

• Coupling Capacitor Breakdown Voltage: >70V with leakage current <1nA

• Pad Reverse Bias Breakdown Voltage: >70V with leakage current <100nA per pad

• Bias Resistance: 5 - 15MOhms

• Leakage Current per Pad: <10nA/pad at V_dep + 15 V

• Total pad Leakage Current per Detector: <1.5uA at V_dep + 15V

• Inner Guard Ring Leakage Current: <50 uA at V_dep + 15V