Physical Specifications:

• Detector Type: PIN, AC-coupled, single-sided, silicon strip

• Substrate: N-type, > 6kOhm/cm bulk resistivity

• Number of Readout Strips: 256

• Number of Guard Rings: 2

• Detector Dimensions:
  • inner detectors: 52mm long x 53mm wide (+/- 50 microns)
  • outer detectors: 74.5mm long x 53mm wide (+/- 50 microns)

• Detector Thickness:
  • inner detectors: 300 microns (+/- 15 microns)
  • outer detectors: 300 microns (+/- 15 microns)

• Active Area Dimensions:
  • inner detectors: 48.87mm long x 51.0mm wide
  • outer detectors: 71.37mm long x 51.0mm wide

• Strip Length:
  • inner detectors: 49mm nominal
  • outer detectors: 71.5mm nominal

• Strip Pitch:
  • inner detectors: 200 microns
  • outer detectors: 200 microns

• P-implant Strip Width: 50 microns nominal

• Bond Pads: two at one end, 80 x 200 microns each

• Bias Resistor Type: polysilicon

• Readout Metalization Width: 40 microns +/- 3

• Metalization Thickness: 0.8 microns +/- 0.1

• Passivation Layer: silicon dioxide, 0.5 micron nominal thickness

Electrical Specifications:

Note: For long term stability and burn-in, all following specifications are to be met after a 72 hour biased burn-in period at room temperature and at below 40% humidity. All measurements are then performed at 21 deg. C +/- 3.

• Max. Number of Bad Channels/Detector: 3

• Depletion Voltage (V_dep): <35 V

• Interstrip Resistance: >100 MOhm at V_dep and delta V = 100 mV

• Coupling Capacitance: >300 pF

• Coupling Capacitor Breakdown Voltage: >70 V with leakage current <1nA

• Strip Reverse Bias Breakdown Voltage: >70 V with total strip leakage current <100 nA per strip

• Bias Resistance: 5 - 15 MOhms

• Leakage Current per Strip: <10 nA/strip at V_dep + 15 V

• Total Strip Leakage Current per Detector: <1.5 uA at V_dep + 15 V

• Inner Guard Ring Leakage Current: <15 uA at V_dep + 15 V